Manufacturer：Infineon Technologies  

Manufacturer Product Number： IPB036N12N3GATMA1  

Description： MOSFET N-CH 120V 180A TO263-7  

Detailed Description：N-Channel 120 V 180A (Tc) 300W (Tc) Surface Mount PG-TO263-7 

Category: Discrete Semiconductor; ProductsTransistors - FETs, MOSFETs - Single  

Mfr: Infineon Technologies  

Series: OptiMOS  

Package: Tape & Reel (TR); Cut Tape (CT)

Product: Status Active  

FET Type: N-Channel  

Technology: MOSFET (Metal Oxide)  

Drain to Source Voltage (Vdss): 120 V  

Current - Continuous Drain (Id) @ 25°C 180A (Tc)  

Drive Voltage (Max Rds On, Min Rds On) 10V  

Rds On (Max) @ Id, Vgs 3.6mOhm @ 100A, 10V  

Vgs(th) (Max) @ Id 4V @ 270µA  

Gate Charge (Qg) (Max) @ Vgs 211 nC @ 10 V  

Vgs (Max) ±20V  

Input Capacitance (Ciss) (Max) @ Vds 13800 pF @ 60 V  

FET Feature -  

Power Dissipation (Max) 300W (Tc)  

Operating Temperature -55°C ~ 175°C (TJ)  

Mounting Type: Surface Mount  

Supplier Device Package: PG-TO263-7  

Package / Case: TO-263-7, D²Pak (6 Leads + Tab)  

Base Product Number: IPB036